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Volumn 515, Issue 18, 2007, Pages 7337-7341
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The study of Pt Schottky contact on porous GaN for hydrogen sensing
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Author keywords
Electrical characteristics; Hydrogen sensor; Morphological studies; Porous GaN
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Indexed keywords
ELECTROCHEMICAL ETCHING;
GALLIUM NITRIDE;
MICROFABRICATION;
MICROSTRUCTURE;
POROUS MATERIALS;
SEMICONDUCTOR JUNCTIONS;
ELECTRICAL CHARACTERISTICS;
HYDROGEN SENSORS;
MORPHOLOGICAL STUDIES;
POROUS GAN;
CHEMICAL SENSORS;
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EID: 34249089834
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2007.02.096 Document Type: Article |
Times cited : (44)
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References (13)
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