Structural characterization and strain relaxation in porous GaN layers

Applied Physics Letters

Volumn 76, Issue 9, 2000, Pages 1113-1115

  Mynbaeva, M ^a   Titkov, A ^a   Kryganovskii, A ^a   Ratnikov, V ^a   Mynbaev, K ^a   Huhtinen, H ^b   Laiho, R ^b   Dmitriev, V ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF TURKU   (Finland)

^c Technol and Devices Intl Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001433170     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125955     Document Type: Article

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