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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 25, Issue 4, 2005, Pages 636-642

Visible photoluminescence in porous GaAs capped by GaAs

(7) Beji, L a Sfaxi, L a Ismail B a Missaoui, A a Hassen, F a Maaref, H a Ouada, H Ben a

a FACULTÉ DES SCIENCES DE MONASTIR (Tunisia)

Author keywords

Molecular beam epitaxy; Photoluminescence; Porous GaAs; Quantum confinement

Indexed keywords

ELECTRIC EXCITATION; ELECTROCHEMISTRY; ETCHING; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POROUS MATERIALS; QUANTUM THEORY; SUBSTRATES; THERMAL EFFECTS;

POROUS GAAS; QUANTUM CONFINEMENT; TEMPERATURE DEPENDENCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 10044258514 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2004.09.005 Document Type: Article

Times cited : (14)

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