Enhanced ultraviolet photoconductivity in porous GaN prepared by metal-assisted electroless etching

Solid State Communications

Volumn 140, Issue 3-4, 2006, Pages 159-162

  Guo, X Y ^a   Williamson, T L ^a   Bohn, P W ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

A. Semiconductors; D. Photoconductivity and Photovoltaics

Indexed keywords

ETCHING; PHOTOCONDUCTIVITY; PHOTODETECTORS; PHOTOVOLTAIC EFFECTS; PLATINUM; POROUS MATERIALS; SEMICONDUCTOR MATERIALS; ULTRAVIOLET DEVICES;

DEFECT DENSITY; ELECTROLESS ETCHING; OPTICAL QUENCHING BEHAVIOR; PHOTORESPONSE;

GALLIUM NITRIDE;

EID: 33748791463     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2006.08.003     Document Type: Article

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