Critical layer thickness enhancement of InAs overgrowth on porous GaAs

Journal of Crystal Growth

Volumn 258, Issue 1-2, 2003, Pages 84-88

  Beji, L ^a   Ismail B ^a   Sfaxi, L ^a   Hassen, F ^a   Maaref, H ^a   Ouada, H Ben ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

A1. Anodisation; A1. Photoluminescence; A3. Molecular beam epitaxy; A3. Quantum dots; B1. InAs; B1. Porous GaAs

Indexed keywords

MOLECULAR BEAM EPITAXY; MONOLAYERS; POROUS MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS;

PEAK EMISSION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0041830116     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01516-1     Document Type: Article

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