Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer

Journal of Applied Physics

Volumn 81, Issue 1, 1997, Pages 292-296

  Almeida, J ^a   Coluzza, C ^a   Dell'Orto, T ^a   Margaritondo, G ^a   Terrasi, A ^b   Ivanco, J ^c  

^a EPFL   (Switzerland)

^b CNR   (Italy)

^c INSTITUTE OF PHYSICS   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001767501     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363847     Document Type: Article

References (31)

1. G. Margaritondo and P. Perfetti, in Heterojunction Band Discontinuities (North-Holland, Amsterdam, 1987).
2. T. dell'Orto, J. Almeida, A. Terrasi, M. Marsi, C. Coluzza, G. Margaritondo, and P. Perfetti, Phys. Rev. B 50, 18 189 (1994).
3. L. Sorba, G. Bratina, G. Ceccone, A. Antonini, J. F. Walker, M. Micovic, and A. Franciosi, Phys. Rev. B 43, 2450 (1991); G. Bratina, L. Sorba, A. Antonini, G. Biasol, and A. Franciosi, ibid. 45, 4528 (1992).
4. L. Sorba, G. Bratina, G. Ceccone, A. Antonini, J. F. Walker, M. Micovic, and A. Franciosi, Phys. Rev. B 43, 2450 (1991); G. Bratina, L. Sorba, A. Antonini, G. Biasol, and A. Franciosi, ibid. 45, 4528 (1992).
5. M. Marsi, R. Houdré, A. Rudra, M. Ilegems, F. Gozzo, C. Coluzza, and G. Margaritondo, Phys. Rev. B 47, 6455 (1993); M. Marsi, S. La Rosa, Y. Hwu, F. Gozzo, C. Coluzza, A. Baldereschi, G. Margaritondo, J. T. McKinley, S. Baroni, and R. Resta, J. Appl. Phys. 71, 2048 (1992).
6. M. Marsi, R. Houdré, A. Rudra, M. Ilegems, F. Gozzo, C. Coluzza, and G. Margaritondo, Phys. Rev. B 47, 6455 (1993); M. Marsi, S. La Rosa, Y. Hwu, F. Gozzo, C. Coluzza, A. Baldereschi, G. Margaritondo, J. T. McKinley, S. Baroni, and R. Resta, J. Appl. Phys. 71, 2048 (1992).
7. S. A. Chambers, J. Vac. Sci. Technol. A 11, 860 (1993); J. C. Costa, F. Williamson, T. J. Miller, K. Beyzavi, M. I. Nathan, D. S. L. Mui, S. Strite, and H. Morkoç, Appl. Phys. Lett. 58, 382 (1991), and references therein.
8. S. A. Chambers, J. Vac. Sci. Technol. A 11, 860 (1993); J. C. Costa, F. Williamson, T. J. Miller, K. Beyzavi, M. I. Nathan, D. S. L. Mui, S. Strite, and H. Morkoç, Appl. Phys. Lett. 58, 382 (1991), and references therein.
9. E. S. Aydil and R. S. Gottscho, Mater. Sci. Forum 148-149, 159 (1994).
10. I. Jimenez, F. Palomares, and J. L. Salcedón, Phys. Rev. B 49, 16 (1994).
11. J. Kolnik, J. Ivanco, M. Ozvold, F. Wyczisk, and J. Olivier, J. Appl. Phys. 73, 5076 (1993); J. Kolnik and J. Ivanco, J. Cryst. Growth 126, 156 (1993).
12. J. Kolnik, J. Ivanco, M. Ozvold, F. Wyczisk, and J. Olivier, J. Appl. Phys. 73, 5076 (1993); J. Kolnik and J. Ivanco, J. Cryst. Growth 126, 156 (1993).
13. I. M. Vitomorov, A. D. Rainasen, A. C. Finnefrock, R. E. Viturro, L. J. Brillson, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, J. Vac. Sci. Technol. B 10, 1898 (1992).
14. U. Gelius, B. Wannberg, P. Baltzer, H. Fellner-Feldegg, G. Carlson, C. G. Johansson, J. Larson, P. Münger, and G. Vegefors, J. Electron Spectrosc. Relat. Phenom. 52, 747 (1990).
15. D. Briggs and M. P. Seah, Practical Surface Analysis (Wiley, Chichester, 1983), Vol. 1.
16. J. Almeida, T. dell'Orto, C. Coluzza, A. Baldereschi, G. Margaritondo, A. Rudra, H. J. Buhlman, and M. Ilegemes, J. Appl. Phys. 78, 5 (1995).
17. G. Le Lay, D. Mao, A. Kahn, Y. Hwu, and G. Margaritondo, Phys. Rev. B 43, 17 (1991).
18. F. J. Gruntaner and P. J. Gruntaner, Material Science Reports I (North-Holland, Amsterdam, 1986); T. Hattori, J. Vac. Sci. Technol. B 11, 1528 (1993).
19. F. J. Gruntaner and P. J. Gruntaner, Material Science Reports I (North-Holland, Amsterdam, 1986); T. Hattori, J. Vac. Sci. Technol. B 11, 1528 (1993).
20. G. M. Ingo, N. Zachetti, D. della Sala, and C. Coluzza, J. Vac. Sci. Technol. A 7, 3048 (1989).
21. P. Friedel, J. P. Landesman, P. Boher, and J. Schneider, J. Vac. Sci. Technol. B 5, 1129 (1987).
22. R. H. Fowler, Phys. Rev. 38, 45 (1931).
23. T. P. Chen, T. C. Lee, S. Fung, and C. D. Beiling, Semicond. Sci. Technol. 8, 2085 (1993).
24. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts (Clarendon, Oxford, 1988).
25. R. T. Sanderson, in Inorganic Chemistry (Reinhold, New York, 1967); R. T. Sanderson, in Chemical Bonds and Bond Energy (Academic, New York, 1971); J. C. Carver, R. C. Gray, and D. M. Hercules, J. Am. Chem. Soc. 96, 6851 (1974).
26. R. T. Sanderson, in Inorganic Chemistry (Reinhold, New York, 1967); R. T. Sanderson, in Chemical Bonds and Bond Energy (Academic, New York, 1971); J. C. Carver, R. C. Gray, and D. M. Hercules, J. Am. Chem. Soc. 96, 6851 (1974).
27. R. T. Sanderson, in Inorganic Chemistry (Reinhold, New York, 1967); R. T. Sanderson, in Chemical Bonds and Bond Energy (Academic, New York, 1971); J. C. Carver, R. C. Gray, and D. M. Hercules, J. Am. Chem. Soc. 96, 6851 (1974).
28. P. Perfetti, C. Quaresima, C. Coluzza, and G. Margaritondo, Phys. Rev. Lett. 57, 2065 (1986).
29. J. Yeh, J. Hwang, K. Bertness, D. J. Friedman, R. Cao, and I. Lindau, Phys. Rev. Lett. 70, 3768 (1993).
30. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984); J. Tersoff and W. Harrison, J. Vac. Sci. Technol. B 5, 1221 (1987).
31. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984); J. Tersoff and W. Harrison, J. Vac. Sci. Technol. B 5, 1221 (1987).