The double Gaussian distribution of barrier heights in Al/ TiO 2/p-Si (metal-insulator-semiconductor) structures at low temperatures

Journal of Applied Physics

Volumn 104, Issue 1, 2008, Pages

  Pakma, O ^a,b   Serin, N ^a   Serin, T ^a   Altindal, S ^c  

^a ANKARA UNIVERSITY   (Turkey)

^b MUGLA SITKI KOCMAN UNIVERSITY   (Turkey)

^c GAZI UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ADMINISTRATIVE DATA PROCESSING; DATA STRUCTURES; DIRECT ENERGY CONVERSION; GAUSSIAN DISTRIBUTION; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; STANDARDS; SWITCHING CIRCUITS; THERMIONIC EMISSION; TRELLIS CODES;

BARRIER HEIGHT (BH); CURRENT VOLTAGE (I V) CHARACTERISTICS; GAUSSIAN; GAUSSIAN DISTRIBUTION (GD); IDEALITY FACTORS; INHOMOGENEITIES; METAL/INSULATOR/SEMICONDUCTOR (MIS) STRUCTURES; STANDARD DEVIATION (STD); TEMPERATURE DEPENDENCES; TEMPERATURE RANGES; ZERO BIAS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 47749120613     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2952028     Document Type: Article

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