The determination of interface states and series resistance profile of Al/polymer/PEDOT-PSS/ITO heterojunction diode by I-V and C-V methods

Synthetic Metals

Volumn 158, Issue 17-18, 2008, Pages 727-731

  Sahingoz R ^a,b   Kanbur, H ^a   Voigt, M ^b   Soykan, C ^a  

^a Yozgat Faculty of Arts and Science   (Turkey)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Frequency dependent; Heterojunction diode; Organic nanometric thin film; Poly 2 (2 naphtylamino) 2 oxo ethyl methacrylate ; Polymer; Series resistance

Indexed keywords

HETEROJUNCTIONS; SEMICONDUCTOR DIODES;

C-V METHODS; CAPACITANCE-VOLTAGE; FORWARD BIAS; FREQUENCY DEPENDENT; FREQUENCY DISPERSIONS; FREQUENCY RANGING; GATE BIASES; HETEROJUNCTION DIODE; HETEROJUNCTION DIODES; INTERFACE STATES; LOW FREQUENCIES; ORGANIC NANOMETRIC THIN FILM; POLY[2-(2-NAPHTYLAMINO)-2-OXO-ETHYL METHACRYLATE]; POLYMER; REVERSE BIASES; ROOM TEMPERATURES; SERIES RESISTANCE; SURFACE STATES;

DIODES;

EID: 52249091743     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2008.04.023     Document Type: Article

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