Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes

Microelectronics Reliability

Volumn 50, Issue 1, 2010, Pages 39-44

  Dökme, I ^a   Altindal, Ş ^a   Tunc T ^b   Uslu, I ^c  

^a GAZI UNIVERSITY   (Turkey)

^b AKSARAY UNIVERSITY   (Turkey)

^c SELCUK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

AC ELECTRICAL CONDUCTIVITY; C-V CHARACTERISTIC; CAPACITANCE VOLTAGE; DIELECTRIC CONSTANTS; DIELECTRIC LOSS TANGENT; ELECTRICAL AND DIELECTRIC PROPERTIES; HIGH TEMPERATURE; INTERFACE STATE DENSITY; INTERFACIAL LAYER; INTERFACIAL POLARIZATION; INTERSECTION POINTS; SERIES RESISTANCES; SI SCHOTTKY DIODE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE;

CAPACITANCE; CERAMIC CAPACITORS; DIELECTRIC DEVICES; DIELECTRIC LOSSES; DIFFUSERS (OPTICAL); ELECTRIC CONDUCTIVITY; NICKEL; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SILICON; TANNING; ZINC;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72449135675     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.09.005     Document Type: Article

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