The effect of gamma irradiation on electrical characteristics of Au/Polyvinyl Alcohol (Co,Zn-doped)/n-Si Schottky barrier diodes

Journal of Applied Polymer Science

Volumn 118, Issue 1, 2010, Pages 596-603

  Tascioglu ^a   Uslu, H ^a   Altindal, S ^a   Durmus P ^a   Dokme ^a   Tunc T ^b  

^a GAZI UNIVERSITY   (Turkey)

^b AKSARAY UNIVERSITY   (Turkey)

Author keywords

Au Polyvinyl Alcohol (Co,Zn doped) n Si schottky barrier diodes (SBDs); Interface states; Radiation effects; Series resistance

Indexed keywords

AU/POLYVINYL ALCOHOL (CO,ZN-DOPED)/N-SI SCHOTTKY BARRIER DIODES (SBDS); BARRIER HEIGHTS; BEFORE AND AFTER; BIAS DEPENDENCE; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; DENSITY OF INTERFACE STATE; ELECTRICAL CHARACTERISTIC; ELECTRICAL PARAMETER; ENERGY LEVEL; FORBIDDEN BAND; FORWARD BIAS; GAMMA IRRADIATION; GAMMA RADIATION; I-V AND C-V CHARACTERISTICS; IDEALITY FACTORS; INTERFACE STATE; IV CHARACTERISTICS; MAIN EFFECT; MEASUREMENT METHODS; REVERSE LEAKAGE CURRENT; ROOM TEMPERATURE; SERIES RESISTANCES;

BIAS VOLTAGE; GAMMA RAYS; IRRADIATION; MOS CAPACITORS; RADIATION EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; ZINC;

SCHOTTKY BARRIER DIODES;

BARRIER PROPERTY; DEGRADATION; ELECTRICAL PROPERTY; INTERFACIAL PROPERTY; IRRADIATION; MEASURING; POLYVINYL ALCOHOL; RESISTANT PROPERTY; TEMPERATURE EFFECT;

EID: 77955988613     PISSN: 00218995     EISSN: 10974628     Source Type: Journal    
DOI: 10.1002/app.32450     Document Type: Article

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