Density functional study of initial HfCl 4 adsorption and decomposition reactions on silicon surfaces with SiON interfacial layer

Applied Surface Science

Volumn 253, Issue 23, 2007, Pages 9148-9153

  Ren, Jie ^a   Sun, Bao ^a   Zhang, David Wei ^b  

^a HEBEI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b ASIC and System   (China)

Author keywords

Atomic layer deposition; Density functional theory; Dielectrics; Hafnium

Indexed keywords

ADSORPTION; ATOMIC LAYER DEPOSITION; DECOMPOSITION; DENSITY FUNCTIONAL THEORY; DIELECTRIC MATERIALS; REACTION KINETICS; SILICON;

AMINO SURFACE SITES; HYDROXYL SITE; INTERFACIAL LAYER; REACTION ENERGIES;

HAFNIUM COMPOUNDS;

EID: 34548215935     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.05.042     Document Type: Article

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