Surface reaction mechanism of atomic layer deposition of HfO 2 on Ge(1 0 0)-2 × 1: A density functional theory study

Applied Surface Science

Volumn 252, Issue 24, 2006, Pages 8466-8470

  Ren, Jie ^a,b   Lu, Hong Liang ^a   Chen, Wei ^a   Xu, Min ^a   Zhang, David Wei ^a  

^a ASIC and System   (China)

^b HEBEI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Ab initio calculation; Atomic layer deposition; Chemisorption; Dielectrics

Indexed keywords

ADSORPTION; CHEMISORPTION; DIELECTRIC MATERIALS; HYDROXYLATION; PROBABILITY DENSITY FUNCTION; REACTION KINETICS;

AB INITIO CALCULATION; ATOMIC LAYER DEPOSITION;

HAFNIUM COMPOUNDS;

EID: 33748962353     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.11.057     Document Type: Article

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