Initial reaction of HfO2 atomic layer deposition on silicon surfaces with different oxygen levels: A density functional theory study

Thin Solid Films

Volumn 515, Issue 11, 2007, Pages 4702-4708

  Ren, Jie ^a   Liu, Feng Yi ^b   Zhang, Ya Tong ^a   Zhang, David Wei ^c  

^a HEBEI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HEBEI NORMAL UNIVERSITY   (China)

^c ASIC and System   (China)

Author keywords

Chemisorption; Dielectrics; Hafnium; Oxides

Indexed keywords

ADSORPTION; ATOMS; CHEMISORPTION; CHLORINE; DEPOSITION; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; HYDROXYLATION; OXIDES; OXYGEN; SILICON; THERMAL EFFECTS;

ATOMIC LAYER DEPOSITION; DEHYDROXYLATION; INITIAL REACTION; SILICON SURFACES;

PROBABILITY DENSITY FUNCTION;

EID: 33847172364     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.045     Document Type: Article

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