The formation of an almost full atomic monolayer via surface modification by N2O-plasma in atomic layer deposition of zrO2 thin films

Chemistry of Materials

Volumn 21, Issue 19, 2009, Pages 4374-4379

  Won, Seok Jun ^a,b   Kim, Ju Youn ^b   Choi, Gyu Jin ^a   Heo, Jaeyeong ^a   Hwang, Cheol Seong ^a   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC MONOLAYERS; ELECTRICAL PROPERTY; INTERFACE QUALITY; METAL PRECURSOR; PLASMA PROCESS; SURFACE MODIFICATION; ZRO2 THIN FILMS;

ATOMIC LAYER DEPOSITION; DEPOSITION; DEPOSITION RATES; DIELECTRIC FILMS; ELECTRIC PROPERTIES; FILM GROWTH; MONOLAYERS; NITRIC OXIDE; OXIDANTS; PLASMA DEPOSITION; PLASMAS; SURFACE TREATMENT; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

AUGER ELECTRON SPECTROSCOPY;

EID: 70350238182     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm9005234     Document Type: Article

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