Dislocation behavior in heavily germanium-doped silicon crystal

Materials Science in Semiconductor Processing

Volumn 5, Issue 4-5 SPEC., 2002, Pages 409-412

  Taishi, Toshinori ^a   Huang, Xinming ^b   Yonenaga, Ichiro ^c   Hoshikawa, Keigo ^a  

^a SHINSHU UNIVERSITY   (Japan)

^b Silicon Technology Corporation   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Cz Si crystal growth; Heavy Ge doping in Si; X ray topography

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMAL EFFECTS; X RAY ANALYSIS;

THERMAL SHOCKS; X RAY TOPOGRAPHIES;

SILICON WAFERS;

EID: 0036962272     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00128-2     Document Type: Conference Paper

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