IR studies of oxygen-vacancy defects in electron-irradiated Ge-doped Si

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 487-490

  Londos, C A ^a   Andrianakis, A ^a   Aliprantis, D ^a   Ohyama, H ^b   Emtsev, V V ^c   Oganesyan, G A ^c  

^a UNIVERSITY OF ATHENS   (Greece)

^b KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

Electron irradiation; Experiment; Ge doped Si; Group IV and compounds

Indexed keywords

COMPLEXATION; DIFFUSION; ELECTRON IRRADIATION; THERMAL EFFECTS;

GROUP IV AND COMPOUNDS;

OXYGEN VACANCIES;

EID: 36148966924     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.09.005     Document Type: Article

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