Enhancement effect of germanium on oxygen precipitation in Czochralski silicon

Journal of Applied Physics

Volumn 99, Issue 7, 2006, Pages

  Chen, Jiahe ^a   Yang, Deren ^a   Li, Hong ^a   Ma, Xiangyang ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); OXYGEN; PRECIPITATION (CHEMICAL); THERMAL EFFECTS;

CZOCHRALSKI (CZ) SILICON; ISOTHERMAL ANNEALS; PRECIPITATE NUCLEATION;

GERMANIUM;

EID: 33645903864     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2188130     Document Type: Article

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