Saddle point for oxygen reorientation in the vicinity of a silicon vacancy

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 19, 2003, Pages

  Dobaczewski, L ^a,b,c   Andersen, O ^b   Rubaldo, L ^b,d   Goscinski K ^a   Markevich, V P ^b   Peaker, A R ^b   Bonde Nielsen, K ^c  

^a INSTITUTE OF PHYSICS   (Poland)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c AARHUS UNIVERSITY   (Denmark)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; SILICON;

ARTICLE; COMPLEX FORMATION; MOLECULAR DYNAMICS; OXYGEN DIFFUSION; POLARIZATION; SPECTROSCOPY; STRESS;

EID: 0038302332     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.195204     Document Type: Article

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