Defects in germanium-doped Czochralski silicon

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 5, 2005, Pages 931-938

  Yang, Deren ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CZOCHRALSKI SILICON; GATE OXIDE INTEGRITY (GOI); GERMANIUM DOPING; THERMAL DONORS (TD);

ANNEALING; DOPING (ADDITIVES); ELECTRIC PROPERTIES; HIGH TEMPERATURE EFFECTS; PRECIPITATION (CHEMICAL); SILICON; ULSI CIRCUITS;

GERMANIUM;

EID: 25444505908     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460520     Document Type: Conference Paper

References (31)

1. M. Itsumi, M. Maeda, and T. Ueki, J. Appl. Phys. 84, 1241 (1998).
2. The International Technology Roadmap for Semiconductors (ITRS), Semiconductor Industry Association (SIA) (San Jose, CA, 1999).
3. A. A. Wereszczak, A. S. Barnes, K. Breder, and S. Binapal, J. Mater. Sci. 11, 291 (2000).
4. M. Akatsuka, K. Sueoka, N. Adachi, N. Morimoto, and H. Katahama, Microelectron. Eng. 56, 99 (2001).
5. D. Li, D. Yang, and D. Que, Physica B 273-274, 553 (1999).
6. X. Yu, D. Yang, X. Ma, J. Yang, L. Li, and D. Que, J. Appl. Phys. 92, 188 (2002).
7. X. Yu, D. Yang, X. Ma, L. Li, and D. Que, Semicond. Sci. Tech. 18, 399 (2003).
8. X. Ma, X. Yu, R. Fan, and D. Yang, Appl. Phys. Lett. 81, 496 (2002).
9. D. Yang, R. Fan, L. Li, and D. Que, Appl. Phys. Lett. 68, 487 (1996).
10. D. Yang, D. Que, and K. Sumino, phys. stat. sol. (b) 210, 295 (1998).
11. I. Yonenaga, T. Taishi, X. Huang, and K. Hoshikawa, J. Appl. Phys. 93, 265 (2003).
12. T. Fukuda and A. Ohsawa, Appl. Phys. Lett. 60, 1184 (1992).
13. W. P. Dumke and G. R. Woolhouse, IBM Tech. Disci. Bull. 21, 4687 (1979).
14. T. Taishi, X. Huang, I. Yonenaga, and K. Hoshikawa, Mater. Sci. Semicond. Process. 5, 409 (2002).
15. X. Yu, D. Yang, X. Ma, H. Li, Y. Shen, D. Tian, L. Li, and D. Que, J. Cryst. Growth 250, 359 (2003).
16. D. Yang, X. Yu, X. Ma, J. Xu, L. Li, and D. Que, J. Cryst. Growth 243, 371 (2002).
17. H. Li, D. Yang, X. Ma, X. Yu, and D. Que, J. Appl. Phys. 96, 4161 (2004).
18. H. Li, D. Yang, X. Yu, X. Ma, and D. Que, J. Phys.: Condens. Matter 16, 5745 (2004).
19. C. S. Fuller, N. B. Ditzenberger, N. B. Hannay, and E. Buchier, Phys. Rev. 96, 833 (1954).
20. C. S. Fuller and R. A. Logan, J. Appl. Phys. 28, 1427 (1957).
21. P. Capper, A. W. Jones, E. J. Wallhouse, and J. O. Wilkes, J. Appl. Phys. 48, 1646 (1977).
22. B. Goldsmith, L. Jastrzebski, and R. Soyden, in: Defects in Silicon, edited by W. M. Bullis and L. C. Kimerling (The Electrochemical Society, Pennington, NJ, 1983) p. 142.
23. E. Hild, P. Gaworzewski, M. Franz, and K. Pressel, Appl. Phys. Lett. 72, 1362 (1998).
24. U. Babitski, P. Grinshtaine, M. Ilin, M. Milvidski, and V. Kuznetsov, Phys. Tech. Semicond. 19, 982 (1985).
25. A. Borghesi, B. Pivac, A. Sassella, and A. Stella, J. Appl. Phys. 77, 4169 (1995).
26. K. Sueoka, N. Ikeda, T.Yamamoto, and S. Kobayashi, J. Appl. Phys. 74, 5437 (1993).
27. F. Shimura, Oxygen in Silicon, Semicond. Semimetals 42, 367 (1994).
28. A. Sassella, A. Borghesi, G. Borionetti, and P. Geranzani, Appl. Phys. Lett. 75, 1131 (1999).
29. P. Dold, A. Barz, S. Recha, K. Pressel, M. Franz, and K. W. Benz, J. Cryst. Growth 192, 125 (1998).
30. H. Yamagishi, I. Fusegawa, and N. Fujimaki, Semicond. Sci. Technol. 7, A135 (1992).
31. J. Ryuta, E. Monta, T. Tanaka, and Y. Shimanuki, Jpn. J. Appl. Phys. 29, L1947 (1990).