Rate equation modeling, ab initio calculation, and high sensitive FTIR investigations of the early stages of oxide precipitation in vacancy-rich CZ silicon

Solid State Phenomena

Volumn 156-158, Issue , 2009, Pages 211-216

  Kissinger, G ^a,b   Dabrowski, J ^a   Akhmetov, V ^a,b   Sattler, A ^c   Kot, D ^a,b   Von Ammon, W ^c  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c SILTRONIC AG   (Germany)

Author keywords

Interstitial; Oxygen; Oxygen precipitation; Vacancy; Vacancy oxygen complexes

Indexed keywords

DEFECTS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OXYGEN; POINT DEFECTS; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; CALCULATIONS; VACANCIES;

AB INITIO CALCULATIONS; CZ SILICON; CZOCHRALSKI SILICON WAFERS; ENERGY GAIN; FT-IR INVESTIGATION; FTIR; HIGHLY SENSITIVE; INTERSTITIAL OXYGEN; OXYGEN PRECIPITATION; RATE EQUATIONS; VACANCY-OXYGEN COMPLEXES; INTERSTITIAL; RATE-EQUATION MODELS;

OXYGEN VACANCIES;

EID: 75849130022     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.156-158.211     Document Type: Conference Paper

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