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Journal of Alloys and Compounds

Volumn 509, Issue 6, 2011, Pages 2897-2902

Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)

(7) Bengi, A a Uslu, H a Asar, T a Altindal, S a Cetin S S a Mammadov, T S a,b Ozcelik S a

a GAZI UNIVERSITY (Turkey)

b INSTITUTE OF PHYSICS (Azerbaijan)

Author keywords

Barrier height; C V T characteristics; QW lasers; Series resistance

Indexed keywords

ABSOLUTE TEMPERATURES; ADMITTANCE SPECTROSCOPIES; AS DOPING; BAND GAPS; BARRIER HEIGHTS; C-V-T CHARACTERISTICS; CAPACITANCE VOLTAGE; DEPLETION LAYER; ELECTRICAL PARAMETER; ELECTRONIC PARAMETERS; FERMI ENERGY LEVELS; GAAS; GAAS/ALGAAS; LASER DIODES; QW LASERS; REVERSE BIAS; SERIES RESISTANCES; SINGLE QUANTUM WELL; SINGLE-QUANTUM-WELL LASER DIODE; STRAIGHT LINES; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; WEAK INVERSION REGION;

CAPACITANCE; DIODES; ELECTRIC ADMITTANCE; GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 78651349915 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.11.150 Document Type: Article

Times cited : (15)

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