Structural and electrical characterization of ZnO-based homojunctions

Journal of Alloys and Compounds

Volumn 496, Issue 1-2, 2010, Pages 560-565

  Bacaksiz, E ^a   Cankaya G ^b   Polat, I ^a   Yilmaz, S ^a   Duran, C ^a   Altunbas M ^a  

^a KARADENIZ TECHNICAL UNIVERSITY   (Turkey)

^b GAZIOSMANPASA UNIVERSITY   (Turkey)

Author keywords

Homostructural ZnO p n junctions; Na Mg doped; SEM; X ray diffraction

Indexed keywords

BARRIER HEIGHTS; COATED GLASS SUBSTRATES; ELECTRICAL CHARACTERIZATION; HOMO-JUNCTIONS; IDEALITY FACTORS; INHOMOGENEITIES; MG-DOPED; P-N HOMOJUNCTIONS; P-N JUNCTION; P-TYPE; RECTIFICATION BEHAVIOR; RICHARDSON CONSTANT; SEM; SPRAY PYROLYSIS METHOD; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; ZERO BIAS; ZNO; ZNO LAYERS; ZNO ROD;

ELECTRIC RECTIFIERS; NANORODS; SEMICONDUCTOR JUNCTIONS; SODIUM; SPRAY PYROLYSIS; SUBSTRATES; X RAY DIFFRACTION; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77950863640     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.02.102     Document Type: Article

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