Electrical characterization of Au/n-ZnO Schottky contacts on n-Si

Journal of Alloys and Compounds

Volumn 476, Issue 1-2, 2009, Pages 913-918

  Aydoǧan, Ş ^a   Cinar K ^a   Asil, H ^a   Coskun C ^a   Turut A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Barrier height; n ZnO; Schottky contact; Series resistance

Indexed keywords

ALTERNATING CURRENTS; BARRIER HEIGHT; CHARACTERISTIC PARAMETERS; CURRENT VOLTAGES; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL CHARACTERIZATIONS; ELECTRO-CHEMICAL DEPOSITIONS; FORWARD BIAS; HIGH FREQUENCIES; I-V CHARACTERISTICS; IDEALITY FACTORS; INTERFACE STATE; LOW FREQUENCIES; N-ZNO; ROOM TEMPERATURES; SCHOTTKY CONTACT; SEMICONDUCTING LAYERS; SERIES RESISTANCE; SI SUBSTRATES; SPACE CHARGES; TRANSPORT MECHANISMS; WIDE BAND GAPS; ZNO THIN FILMS;

CAPACITANCE; CAPACITANCE MEASUREMENT; REDUCTION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 64549157556     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2008.09.131     Document Type: Article

References (33)

1. Wager J.F. Thin Solid Films 516 (2008) 1755-1764
2. Minami T. Semicond. Sci. Technol. 20 (2005) 35
3. Ginley D.S., and Bright C. MRS Bull. 25 (2000) 15-18
4. Purica M., Budianu E., and Rusu E. Thin Solid Films 383 (2001) 284
5. Dakhel A.A. Mater. Chem. Phys. 81 (2003) 56-62
6. McCluskey M.D., and Jokela S.J. Physica B 401-402 (2007) 355-357
7. Dhananjay J., Nagaraju S.B., and Krupanidhi. Physica B 391 (2007) 344-349
8. Look D.C. Mater. Sci. Eng. B 80 (2001) 383-387
9. Kim H.Y., Kim J.H., Kim Y.J., Chae K.H., Whang C.N., Song J.H., and Im S. Opt. Mater. 17 (2001) 141-144
10. Rhoderick E.H., and Williams R.H. Metal-semiconductor Contacts. 2nd ed. (1988), Clarendon, Oxford
11. Coskun C., Gedik N., and Balci{dotless} E. Semicond. Sci. Technol. 21 (2006) 1656-1660
12. Gur E., Tuzemen S., Ki{dotless}li{dotless}c B., and Coskun C. J. Phys.: Condens. Matter 19 (2007) 8 196206
13. Schmitsdorf R.F., Kampen T.U., and Mönch W. J Vac. Sci. Technol. B 15 4 (1997) 1221
14. Leroy W.P., Opsomer K., Forment S., and Van Meirhaeghe R.L. Solid State Electron. 49 (2005) 878-883
15. Akkilic K., Turut A., Cankaya G., and Kilicoglu T. Solid State Commun. 125 (2003) 551-556
16. Turut A., Saglam M., Efeoglu H., Yalcin N., Yildirim M., and Abay B. Physica B 205 (1995) 41
17. Cheung S.K., and Cheung N.W. Appl. Phys. Lett. 49 (1986) 85
18. Kilicoglu T. Thin Solid Films 516 6 (2008) 967
19. Karatas S., Altindal S., Turut A., and Cakar M. Physica B 392 1-2 (2007) 43
20. Zhu M., Cui T., and Varahramyan K. Microelectron. Eng. 75 (2004) 269-274
21. Syed Abthagi{dotless}r P., and Saraswathi{dotless} R. J. Appl. Polymer Sci. 81 (2001) 2127-2135
22. Forrest S.R. Chem. Rev. 97 (1997) 1793
23. Aydogan S., Saglam M., and Turut A. Polymer 46 (2005) 563-568
24. Sze S.M. Physics of Semiconductor Devices. 2nd ed. (1981), Wiley, New York
25. Sheng H., Muthukumar S., Emanetoglu N.W., and Lu Y. Appl. Phys. Lett. 80 (2002) 2132
26. Turut A., Yalcin N., and Saglam M. Solid State Electron. 35 (1992) 835
27. Coskun C., Aydogan S., and Efeoglu H. Semicond. Sci. Technol. 19 (2004) 242-246
28. Karatas S., and Turut A. Vacuum 74 (2004) 45-53
29. Aydogan S., Saglam M., and Turut A. Polymer 46 16 (2005) 6148-6153
30. Çakar M., Yi{dotless}ldi{dotless}ri{dotless}m N., Doǧan H., and Türüt A. Appl. Surface Sci. 253 7 (2007) 3464-3468
31. Crowell C.R., and Nakano K. Solid State Electron. 15 (1972) 605
32. Chen Y.G., Ogura M., Okushi H., and Kobayashi N. Diamond Relat. Mater. 12 (2003) 1340
33. Aydogan S., Saglam M., and Turut A. Appl. Surf. Sci. 250 (2005) 43-49