The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics

Journal of Alloys and Compounds

Volumn 492, Issue 1-2, 2010, Pages 421-426

  Sertap Kavasoglu, A ^a   Yakuphanoglu, Fahrettin ^b   Kavasoglu, Nese ^a   Pakma, Osman ^a   Birgi, Ozcan ^a   Oktik, Sener ^a  

^a MUGLA SITKI KOCMAN UNIVERSITY   (Turkey)

^b FIRAT UNIVERSITY   (Turkey)

Author keywords

Barrier height; Heterojunction diode; I V characteristics; Ideality factor; MEH PPV; Schottky diodes; Series resistance

Indexed keywords

BARRIER HEIGHTS; HETEROJUNCTION DIODES; IDEALITY FACTORS; IV CHARACTERISTICS; MEH-PPV; SCHOTTKY DIODES; SERIES RESISTANCES;

HETEROJUNCTIONS; SEMICONDUCTOR DIODES; SILICON SOLAR CELLS; THERMIONIC EMISSION; TUNNELING (EXCAVATION); WIND TUNNELS;

SCHOTTKY BARRIER DIODES;

EID: 76549132881     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.11.128     Document Type: Article

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