The distribution of barrier heights in MIS type Schottky diodes from current-voltage-temperature (I-V-T) measurements

Journal of Alloys and Compounds

Volumn 479, Issue 1-2, 2009, Pages 893-897

  Tataroǧlu, Adem ^a   Altindal, Şemsettin ^a  

^a GAZI UNIVERSITY   (Turkey)

Author keywords

Barrier height; Gaussian distribution; I V T characteristics; Ideality factor; Inhomogeneity; MIS Schottky diodes

Indexed keywords

BARRIER HEIGHT; I-V-T CHARACTERISTICS; IDEALITY FACTOR; INHOMOGENEITY; MIS SCHOTTKY DIODES;

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; DIODES; GAUSSIAN DISTRIBUTION; SEMICONDUCTING SILICON COMPOUNDS; SWITCHING CIRCUITS; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 67349094004     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.01.098     Document Type: Article

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