Current-voltage-temperature (I-V-T) characteristics of Pd/Au Schottky contacts on n-InP (1 1 1)

Current Applied Physics

Volumn 9, Issue 5, 2009, Pages 972-977

  Bhaskar Reddy, M ^a   Ashok Kumar, A ^a   Janardhanam, V ^a   Rajagopal Reddy, V ^a   Narasimha Reddy, P ^a  

^a SRI VENKATESWARA UNIVERSITY   (India)

Author keywords

Current voltage temperature characteristics; n Type InP; Pd Au Schottky contact; Schottky barrier height

Indexed keywords

BARRIER HEIGHTS; CURRENT-VOLTAGE-TEMPERATURE CHARACTERISTICS; FORWARD CURRENTS; IDEALITY FACTORS; LINEAR RELATIONSHIPS; LOW TEMPERATURES; N-TYPE INP; NON LINEARITIES; PD/AU SCHOTTKY CONTACT; RICHARDSON CONSTANTS; RICHARDSON PLOTS; SCHOTTKY BARRIER HEIGHT; SCHOTTKY BARRIERS; SERIES RESISTANCES; SPATIAL IN HOMOGENEITIES; STANDARD DEVIATIONS; TEMPERATURE RANGES; ZERO BIAS;

ACTIVATION ENERGY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; THERMIONIC EMISSION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 67349146996     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2008.10.001     Document Type: Article

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