Deep level transient spectroscopy of AlxGa1-xAs/GaAs single-quantum-well lasers

Semiconductor Science and Technology

Volumn 19, Issue 7, 2004, Pages 897-901

  Zdansky, K ^a   Gorodynskyy, V ^a   Kosikova J ^a,b   Rudra, A ^c   Kapon, E ^c   Fekete, D ^d  

^a INSTITUTE OF PHOTONICS AND ELECTRONICS   (Czech Republic)

^b UNIVERSITY OF WEST BOHEMIA   (Czech Republic)

^c EPFL   (Switzerland)

^d The Technicon   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

CAPACITANCE-VOLTAGE (C-V) MEASUREMENTS; FORWARD BIAS VOLTAGE; GRADED REFRACTIVE INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE(GRINSCH); THERMO-COMPRESSION TECHNIQUE;

QUANTUM WELL LASERS;

EID: 3142726335     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/7/020     Document Type: Article

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