A new I-V model for light-emitting devices with a quantum well

Microelectronics Journal

Volumn 37, Issue 11, 2006, Pages 1335-1338

  Lee, Chin C ^a   Chen, Winnie V ^a   Park, Jeong ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Diodes; Light emitting diodes; p n junctions; Quantum well devices; Semiconductor lasers

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRONS; GALLIUM NITRIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

DEPLETION REGION; FORWARD BIAS CONDITIONS; JUNCTION TEMPERATURE; SAH-NOYCE-SHOCKLEY (SNS) DIODES;

LIGHT EMITTING DIODES;

EID: 33750611934     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.07.004     Document Type: Article

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