Examination by interfacial layer and inhomogeneous barrier height model of temperature-dependent I-V characteristics in Co/p-InP contacts

Journal of Alloys and Compounds

Volumn 484, Issue 1-2, 2009, Pages 870-876

  Ejderha, K ^a   Yildirim, N ^a   Abay, B ^b   Turut, A ^b  

^a BINGOL UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Barrier height inhomogeneity; InP; Interfacial layer; Schottky barrier diodes; Thermionic emission

Indexed keywords

BARRIER HEIGHT INHOMOGENEITY; BARRIER HEIGHTS; IDEALITY FACTORS; INHOMOGENEITIES; INP; INTERFACIAL LAYER; IV CHARACTERISTICS; METAL/SEMICONDUCTOR INTERFACE; NATIVE OXIDE LAYER; P-TYPE; RICHARDSON CONSTANT; SAMPLE TEMPERATURE; SCHOTTKY DIODES; STRAIGHT LINES; TEMPERATURE DEPENDENT I-V CHARACTERISTICS; TEMPERATURE RANGE; THERMIONIC EMISSION THEORY; TRANSMISSION COEFFICIENTS;

CURRENT VOLTAGE CHARACTERISTICS; DIODES; THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 69949101450     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.05.062     Document Type: Article

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