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Volumn 495, Issue 1, 2010, Pages 116-120
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Effect of temperature, illumination and frequency on the electrical characteristics of Cu/p-Si Schottky diode prepared by liquid phase epitaxy
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Author keywords
Cu p Si; Frequency; Illumination; Schottky diode
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Indexed keywords
BARRIER HEIGHTS;
CAPACITANCE VOLTAGE;
CAPACITANCE-VOLTAGE CHARACTERISTICS;
CONTINUOUS DISTRIBUTION;
CU ATOMS;
CU FILMS;
CURRENT VOLTAGE;
EFFECT OF TEMPERATURE;
ELECTRICAL CHARACTERISTIC;
EPITAXIALLY GROWN;
FREQUENCY RANGES;
HIGH VOLTAGE;
I-V BEHAVIOR;
IDEALITY FACTORS;
INTERFACE STATE;
INTERFACIAL LAYER;
IV CHARACTERISTICS;
SCHOTTKY CONTACTS;
SCHOTTKY DIODES;
SEM;
SERIES RESISTANCES;
SI SCHOTTKY DIODE;
SI SUBSTRATES;
SILICIDE LAYERS;
SPACE CHARGES;
TEMPERATURE DEPENDENT;
TEMPERATURE RANGE;
CAPACITANCE;
COPPER;
CRYSTAL GROWTH;
CURRENT VOLTAGE CHARACTERISTICS;
LATTICE MISMATCH;
LIQUIDS;
METALLIC FILMS;
PHASE INTERFACES;
SCANNING ELECTRON MICROSCOPY;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DIODES;
SEMICONDUCTOR GROWTH;
SILICIDES;
SMELTING;
STRUCTURAL ANALYSIS;
TOPOGRAPHY;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 77949654679
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2010.01.098 Document Type: Article |
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Times cited : (57)
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References (28)
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