The effect of interface states, excess capacitance and series resistance in the Al/SiO 2 /p-Si Schottky diodes

Applied Surface Science

Volumn 252, Issue 5, 2005, Pages 1732-1738

  Kanbur, H ^a   Altindal, S ^a   Tataroglu A ^a  

^a GAZI UNIVERSITY   (Turkey)

Author keywords

Excess capacitance; Frequency dependent; Insulator layer; Interface states; Series resistance

Indexed keywords

ALUMINUM; CAPACITANCE; INTERFACES (MATERIALS); METAL INSULATOR TRANSITION;

INSULATOR LAYERS; INTERFACE STATES; SERIES RESISTANCE;

SCHOTTKY BARRIER DIODES;

EID: 27944460422     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.03.122     Document Type: Article

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