-
1
-
-
0036493244
-
-
IJSQEN 1077-260X, 10.1109/2944.999186
-
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, and M. J. Ludowise, IEEE J. Sel. Top. Quantum Electron. IJSQEN 1077-260X, 8, 310 (2002). 10.1109/2944.999186
-
(2002)
IEEE J. Sel. Top. Quantum Electron.
, vol.8
, pp. 310
-
-
Steigerwald, D.A.1
Bhat, J.C.2
Collins, D.3
Fletcher, R.M.4
Holcomb, M.O.5
Ludowise, M.J.6
-
2
-
-
19744374735
-
-
SCIEAS 0036-8075, 10.1126/science.1108712
-
E. F. Schubert and J. K. Kim, Science SCIEAS 0036-8075, 308, 1274 (2005). 10.1126/science.1108712
-
(2005)
Science
, vol.308
, pp. 1274
-
-
Schubert, E.F.1
Kim, J.K.2
-
3
-
-
46749095575
-
-
JLTEDG 0733-8724, 10.1109/JLT.2008.923628
-
R. D. Dupuis and M. R. Krames, J. Lightwave Technol. JLTEDG 0733-8724, 26, 1154 (2008). 10.1109/JLT.2008.923628
-
(2008)
J. Lightwave Technol.
, vol.26
, pp. 1154
-
-
Dupuis, R.D.1
Krames, M.R.2
-
4
-
-
78650726325
-
-
last accessed Dec. 8, 2010.
-
C. Fricke, http://www.electronicsweekly.com/Articles/2010/04/14/48410/ cree-160-lmw-leds-soon.htm, last accessed Dec. 8, 2010.
-
-
-
Fricke, C.1
-
5
-
-
0001466566
-
-
APPLAB 0003-6951, 10.1063/1.120164
-
O.-H. Nam, M. D. Bremser, T. S. Zheleva, and R. F. Davis, Appl. Phys. Lett. APPLAB 0003-6951, 71, 2638 (1997). 10.1063/1.120164
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 2638
-
-
Nam, O.-H.1
Bremser, M.D.2
Zheleva, T.S.3
Davis, R.F.4
-
6
-
-
0032114637
-
-
JAPNDE 0021-4922, 10.1143/JJAP.37.L839
-
X. T. Mukai, K. Takekawa, and S. Nakamura, Jpn. J. Appl. Phys. JAPNDE 0021-4922, 37, L839 (1998). 10.1143/JJAP.37.L839
-
(1998)
Jpn. J. Appl. Phys.
, vol.37
, pp. 839
-
-
Mukai, X.T.1
Takekawa, K.2
Nakamura, S.3
-
7
-
-
67650474971
-
-
APPLAB 0003-6951, 10.1063/1.3166868
-
J. W. Lee, C. Sone, Y. Park, S.-N. Lee, J.-H. Ryou, R. D. Dupuis, C.-H. Hong, and H. Kim, Appl. Phys. Lett. APPLAB 0003-6951, 95, 011108 (2009). 10.1063/1.3166868
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 011108
-
-
Lee, J.W.1
Sone, C.2
Park, Y.3
Lee, S.-N.4
Ryou, J.-H.5
Dupuis, R.D.6
Hong, C.-H.7
Kim, H.8
-
8
-
-
35648977539
-
-
APPLAB 0003-6951, 10.1063/1.2800290
-
M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Appl. Phys. Lett. APPLAB 0003-6951, 91, 183507 (2007). 10.1063/1.2800290
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 183507
-
-
Kim, M.-H.1
Schubert, M.F.2
Dai, Q.3
Kim, J.K.4
Schubert, E.F.5
Piprek, J.6
Park, Y.7
-
9
-
-
35148864428
-
-
APPLAB 0003-6951, 10.1063/1.2785135
-
Y. C. Shen, G. O. Müller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett. APPLAB 0003-6951, 91, 141101 (2007). 10.1063/1.2785135
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 141101
-
-
Shen, Y.C.1
Müller, G.O.2
Watanabe, S.3
Gardner, N.F.4
Munkholm, A.5
Krames, M.R.6
-
10
-
-
67649126477
-
-
APPLAB 0003-6951, 10.1063/1.3153508
-
S. H. Han, D. Y. Lee, S. J. Lee, C. Y. Cho, M. K. Kwon, S. P. Lee, D. Y. Noh, D. J. Kim, Y. C. Kim, and S. J. Park, Appl. Phys. Lett. APPLAB 0003-6951, 94, 231123 (2009). 10.1063/1.3153508
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 231123
-
-
Han, S.H.1
Lee, D.Y.2
Lee, S.J.3
Cho, C.Y.4
Kwon, M.K.5
Lee, S.P.6
Noh, D.Y.7
Kim, D.J.8
Kim, Y.C.9
Park, S.J.10
-
11
-
-
0038311836
-
-
JAPIAU 0021-8979, 10.1063/1.1571962
-
C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, J. Appl. Phys. JAPIAU 0021-8979, 93, 9383 (2003). 10.1063/1.1571962
-
(2003)
J. Appl. Phys.
, vol.93
, pp. 9383
-
-
Huh, C.1
Lee, K.S.2
Kang, E.J.3
Park, S.J.4
-
12
-
-
1542315187
-
-
APPLAB 0003-6951, 10.1063/1.1645992
-
T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. APPLAB 0003-6951, 84, 855 (2004). 10.1063/1.1645992
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 855
-
-
Fujii, T.1
Gao, Y.2
Sharma, R.3
Hu, E.L.4
Denbaars, S.P.5
Nakamura, S.6
-
13
-
-
27344453017
-
-
ZZZZZZ 1610-1634, 10.1002/pssc.200461337
-
J. Cho, H. Kim, H. Kim, J. W. Lee, S. Yoon, C. Sone, Y. Park, and E. Yoon, Phys. Status Solidi C ZZZZZZ 1610-1634, 2, 2874 (2005). 10.1002/pssc.200461337
-
(2005)
Phys. Status Solidi C
, vol.2
, pp. 2874
-
-
Cho, J.1
Kim, H.2
Kim, H.3
Lee, J.W.4
Yoon, S.5
Sone, C.6
Park, Y.7
Yoon, E.8
-
14
-
-
33745596605
-
-
IPTLEL 1041-1135, 10.1109/LPT.2006.877562
-
S.-I. Na, G.-Y. Ha, D.-S. Han, S.-S. Kim, J.-Y. Kim, J.-H. Lim, D.-J. Kim, K.-I. Min, and S.-J. Park, IEEE Photon. Technol. Lett. IPTLEL 1041-1135, 18, 1512 (2006). 10.1109/LPT.2006.877562
-
(2006)
IEEE Photon. Technol. Lett.
, vol.18
, pp. 1512
-
-
Na, S.-I.1
Ha, G.-Y.2
Han, D.-S.3
Kim, S.-S.4
Kim, J.-Y.5
Lim, J.-H.6
Kim, D.-J.7
Min, K.-I.8
Park, S.-J.9
-
15
-
-
34247335480
-
-
APPLAB 0003-6951, 10.1063/1.2724903
-
H. Kim, J. Cho, J. W. Lee, S. Yoon, H. K. Kim, C. Sone, Y. Park, and T.-Y. Seong, Appl. Phys. Lett. APPLAB 0003-6951, 90, 161110 (2007). 10.1063/1.2724903
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 161110
-
-
Kim, H.1
Cho, J.2
Lee, J.W.3
Yoon, S.4
Kim, H.K.5
Sone, C.6
Park, Y.7
Seong, T.-Y.8
-
16
-
-
0032620316
-
-
APPLAB 0003-6951, 10.1063/1.124227
-
T. Margalith, O. Buchinsky, D. A. Cohen, A. C. Abare, M. Hansen, S. P. DenBaars, and L. A. Coldren, Appl. Phys. Lett. APPLAB 0003-6951, 74, 3930 (1999). 10.1063/1.124227
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 3930
-
-
Margalith, T.1
Buchinsky, O.2
Cohen, D.A.3
Abare, A.C.4
Hansen, M.5
Denbaars, S.P.6
Coldren, L.A.7
-
17
-
-
33947685489
-
-
IPTLEL 1041-1135, 10.1109/LPT.2007.891640
-
H. Kim, K. H. Baik, J. Cho, J. W. Lee, S. Yoon, H. K. Kim, S.-N. Lee, C. Sone, Y. Park, and T.-Y. Seong, IEEE Photon. Technol. Lett. IPTLEL 1041-1135, 19, 336 (2007). 10.1109/LPT.2007.891640
-
(2007)
IEEE Photon. Technol. Lett.
, vol.19
, pp. 336
-
-
Kim, H.1
Baik, K.H.2
Cho, J.3
Lee, J.W.4
Yoon, S.5
Kim, H.K.6
Lee, S.-N.7
Sone, C.8
Park, Y.9
Seong, T.-Y.10
-
18
-
-
73349100644
-
-
IETDAI 0018-9383, 10.1109/TED.2009.2034506
-
J.-O. Song, J.-S. Ha, and T.-Y. Seong, IEEE Trans. Electron Devices IETDAI 0018-9383, 57, 42 (2010). 10.1109/TED.2009.2034506
-
(2010)
IEEE Trans. Electron Devices
, vol.57
, pp. 42
-
-
Song, J.-O.1
Ha, J.-S.2
Seong, T.-Y.3
-
19
-
-
0000943444
-
-
APPLAB 0003-6951, 10.1063/1.1319505
-
W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, Appl. Phys. Lett. APPLAB 0003-6951, 77, 2822 (2000). 10.1063/1.1319505
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 2822
-
-
Wong, W.S.1
Sands, T.2
Cheung, N.W.3
Kneissl, M.4
Bour, D.P.5
Mei, P.6
Romano, L.T.7
Johnson, N.M.8
-
20
-
-
33747510050
-
-
APPLAB 0003-6951, 10.1063/1.2337007
-
O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, Appl. Phys. Lett. APPLAB 0003-6951, 89, 071109 (2006). 10.1063/1.2337007
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 071109
-
-
Shchekin, O.B.1
Epler, J.E.2
Trottier, T.A.3
Margalith, T.4
Steigerwald, D.A.5
Holcomb, M.O.6
Martin, P.S.7
Krames, M.R.8
-
21
-
-
63049115303
-
-
ITDMA2 1530-4388, 10.1109/TDMR.2008.921527
-
M. Meneghini, L.-R. Trevisanello, G. Meneghesso, and E. Zanoni, IEEE Trans. Device Mater. Reliab. ITDMA2 1530-4388, 8, 323 (2008). 10.1109/TDMR.2008.921527
-
(2008)
IEEE Trans. Device Mater. Reliab.
, vol.8
, pp. 323
-
-
Meneghini, M.1
Trevisanello, L.-R.2
Meneghesso, G.3
Zanoni, E.4
-
22
-
-
73349105248
-
-
IETDAI 0018-9383, 10.1109/TED.2009.2033649
-
M. Meneghini, A. Tazzoli, G. Mura, G. Meneghnesso, and E. Zanoni, IEEE Trans. Electron Devices IETDAI 0018-9383, 57, 108 (2010). 10.1109/TED.2009. 2033649
-
(2010)
IEEE Trans. Electron Devices
, vol.57
, pp. 108
-
-
Meneghini, M.1
Tazzoli, A.2
Mura, G.3
Meneghnesso, G.4
Zanoni, E.5
-
23
-
-
34548691260
-
-
MCRLAS 0026-2714, 10.1016/j.microrel.2007.07.081
-
M. Meneghini, L. Trevisanello, C. Sanna, G. Mura, M. Vanzi, G. Meneghesso, and E. Zanoni, Microelectron. Reliab. MCRLAS 0026-2714, 47, 1625 (2007). 10.1016/j.microrel.2007.07.081
-
(2007)
Microelectron. Reliab.
, vol.47
, pp. 1625
-
-
Meneghini, M.1
Trevisanello, L.2
Sanna, C.3
Mura, G.4
Vanzi, M.5
Meneghesso, G.6
Zanoni, E.7
-
24
-
-
64249148848
-
-
ITDMA2 1530-4388, 10.1109/TDMR.2008.916549
-
S. Buso, G. Spiazzi, M. Meneghini, and G. Meneghesso, IEEE Trans. Device Mater. Reliab. ITDMA2 1530-4388, 8, 312 (2008). 10.1109/TDMR.2008.916549
-
(2008)
IEEE Trans. Device Mater. Reliab.
, vol.8
, pp. 312
-
-
Buso, S.1
Spiazzi, G.2
Meneghini, M.3
Meneghesso, G.4
-
25
-
-
42149135935
-
-
PSISDG 0277-786X, 10.1117/12.732398
-
L. Trevisanello, M. Meneghini, G. Mura, C. Sanna, S. Buso, G. Spiazzi, M. Vanzi, G. Meneghesso, and E. Zanono, Proc. SPIE PSISDG 0277-786X, 6669, 666913 (2007). 10.1117/12.732398
-
(2007)
Proc. SPIE
, vol.6669
, pp. 666913
-
-
Trevisanello, L.1
Meneghini, M.2
Mura, G.3
Sanna, C.4
Buso, S.5
Spiazzi, G.6
Vanzi, M.7
Meneghesso, G.8
Zanono, E.9
-
26
-
-
70449093806
-
-
ZZZZZZ 1082-7285.
-
L. Trevisanello, F. De Zuani, M. Meneghini, N. Trivellin, E. Zanoni, and G. Meneghesso, IEEE Int. Reliab. Phys. Symp. Proc. ZZZZZZ 1082-7285, 2009, 98.
-
IEEE Int. Reliab. Phys. Symp. Proc.
, vol.2009
, pp. 98
-
-
Trevisanello, L.1
De Zuani, F.2
Meneghini, M.3
Trivellin, N.4
Zanoni, E.5
Meneghesso, G.6
-
27
-
-
0041163510
-
-
MICEB9 0026-2692, 10.1016/S0026-2692(96)00031-6
-
V. Sźkely, Microelectron. J. MICEB9 0026-2692, 28, 277 (1997). 10.1016/S0026-2692(96)00031-6
-
(1997)
Microelectron. J.
, vol.28
, pp. 277
-
-
Sźkely, V.1
-
28
-
-
0042099114
-
-
2nd ed., Cambridge University Press, Cambride.
-
E. F. Schubert, Light-Emitting Diodes, 2nd ed., Cambridge University Press, Cambride (2006).
-
(2006)
Light-Emitting Diodes
-
-
Schubert, E.F.1
-
29
-
-
77955794012
-
-
ZZZZZZ 1610-1634, 10.1002/pssc.200983512
-
J.-M. Kang, J.-W. Kim, J.-H. Choi, D.-H. Kim, P.-S. Oh, S.-K. Han, and H.-K. Kwon, Phys. Status Solidi C ZZZZZZ 1610-1634, 7, 2205 (2010). 10.1002/pssc.200983512
-
(2010)
Phys. Status Solidi C
, vol.7
, pp. 2205
-
-
Kang, J.-M.1
Kim, J.-W.2
Choi, J.-H.3
Kim, D.-H.4
Oh, P.-S.5
Han, S.-K.6
Kwon, H.-K.7
-
30
-
-
3142702187
-
-
JCRGAE 0022-0248, 10.1016/j.jcrysgro.2004.04.071
-
N. Narendran, Y. Gu, J. P. Freyssinier, H. Yu, and L. Deng, J. Cryst. Growth JCRGAE 0022-0248, 268, 449 (2004). 10.1016/j.jcrysgro.2004.04.071
-
(2004)
J. Cryst. Growth
, vol.268
, pp. 449
-
-
Narendran, N.1
Gu, Y.2
Freyssinier, J.P.3
Yu, H.4
Deng, L.5
-
31
-
-
34347360612
-
-
JLEVDQ 0387-8805, 10.2150/jlve.31.11
-
S. Ishizaki, H. Kimura, and M. Sugimoto, J. Light Visual Environ. JLEVDQ 0387-8805, 31, 11 (2007). 10.2150/jlve.31.11
-
(2007)
J. Light Visual Environ.
, vol.31
, pp. 11
-
-
Ishizaki, S.1
Kimura, H.2
Sugimoto, M.3
-
32
-
-
33645227114
-
-
JAPIAU 0021-8979, 10.1063/1.2178856
-
F. Rossi, M. Pavesi, M. Meneghini, G. Salviati, M. Manfredi, G. Meneghesso, A. Castaldini, A. Cavallini, L. Gigutti, U. Strass, J. Appl. Phys. JAPIAU 0021-8979, 99, 053104 (2006). 10.1063/1.2178856
-
(2006)
J. Appl. Phys.
, vol.99
, pp. 053104
-
-
Rossi, F.1
Pavesi, M.2
Meneghini, M.3
Salviati, G.4
Manfredi, M.5
Meneghesso, G.6
Castaldini, A.7
Cavallini, A.8
Gigutti, L.9
Strass, U.10
-
33
-
-
21744459074
-
-
JAPIAU 0021-8979, 10.1063/1.1942628
-
S. Bychikhin, D. Pogany, L. K. J. Vandamme, G. Meneghesso, and E. Zanoni, J. Appl. Phys. JAPIAU 0021-8979, 97, 123714 (2005). 10.1063/1.1942628
-
(2005)
J. Appl. Phys.
, vol.97
, pp. 123714
-
-
Bychikhin, S.1
Pogany, D.2
Vandamme, L.K.J.3
Meneghesso, G.4
Zanoni, E.5
-
34
-
-
13844254127
-
-
IJSQEN 1077-260X, 10.1109/JSTQE.2004.837735
-
S. Tomiya, T. Hino, S. Goto, M. Takeya, and M. Ikeda, IEEE J. Sel. Top. Quantum Electron. IJSQEN 1077-260X, 10, 1277 (2004). 10.1109/JSTQE.2004.837735
-
(2004)
IEEE J. Sel. Top. Quantum Electron.
, vol.10
, pp. 1277
-
-
Tomiya, S.1
Hino, T.2
Goto, S.3
Takeya, M.4
Ikeda, M.5
-
35
-
-
73449092882
-
-
JOELFJ 1385-3449, 10.1007/s10832-008-9478-2
-
S.-N. Lee, H. S. Paek, J. K. Son, H. Kim, K. K. Kim, K. H. Ha, O. H. Nam, and Y. Park, J. Electroceram. JOELFJ 1385-3449, 23, 406 (2009). 10.1007/s10832-008-9478-2
-
(2009)
J. Electroceram.
, vol.23
, pp. 406
-
-
Lee, S.-N.1
Paek, H.S.2
Son, J.K.3
Kim, H.4
Kim, K.K.5
Ha, K.H.6
Nam, O.H.7
Park, Y.8
-
36
-
-
0343185041
-
-
MIJNF7 1092-5783.
-
F. Manyakhin, A. Kovalev, and A. E. Yunovich, MRS Internet J. Nitride Semicond. Res. MIJNF7 1092-5783, 3, 53 (1998).
-
(1998)
MRS Internet J. Nitride Semicond. Res.
, vol.3
, pp. 53
-
-
Manyakhin, F.1
Kovalev, A.2
Yunovich, A.E.3
-
37
-
-
0037091886
-
-
JAPIAU 0021-8979, 10.1063/1.1465119
-
A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. Kim, B. Luo, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. V. Osinsky, J. Appl. Phys. JAPIAU 0021-8979, 91, 5203 (2002). 10.1063/1.1465119
-
(2002)
J. Appl. Phys.
, vol.91
, pp. 5203
-
-
Polyakov, A.Y.1
Smirnov, N.B.2
Govorkov, A.V.3
Kim, J.4
Luo, B.5
Mehandru, R.6
Ren, F.7
Lee, K.P.8
Pearton, S.J.9
Osinsky, A.V.10
-
38
-
-
0006009502
-
-
APPLAB 0003-6951, 10.1063/1.1413721
-
O. Pursiainen, N. Linder, A. Jaeger, R. Oberschmid, and K. Streubel, Appl. Phys. Lett. APPLAB 0003-6951, 79, 2895 (2001). 10.1063/1.1413721
-
(2001)
Appl. Phys. Lett.
, vol.79
, pp. 2895
-
-
Pursiainen, O.1
Linder, N.2
Jaeger, A.3
Oberschmid, R.4
Streubel, K.5
-
39
-
-
33845534547
-
-
ITDMA2 1530-4388, 10.1109/TDMR.2006.887416
-
P. N. Grillot, M. R. Krames, H. Zhao, and S.-H. Teoh, IEEE Trans. Device Mater. Reliab. ITDMA2 1530-4388, 6, 564 (2006). 10.1109/TDMR.2006.887416
-
(2006)
IEEE Trans. Device Mater. Reliab.
, vol.6
, pp. 564
-
-
Grillot, P.N.1
Krames, M.R.2
Zhao, H.3
Teoh, S.-H.4
-
40
-
-
31644441849
-
-
JCRGAE 0022-0248, 10.1016/j.jcrysgro.2005.12.049
-
J. Hu, L. Yang, W. J. Hwang, and M. W. Shin, J. Cryst. Growth JCRGAE 0022-0248, 288, 157 (2006). 10.1016/j.jcrysgro.2005.12.049
-
(2006)
J. Cryst. Growth
, vol.288
, pp. 157
-
-
Hu, J.1
Yang, L.2
Hwang, W.J.3
Shin, M.W.4
-
41
-
-
70350341510
-
-
ITEPFL 1521-334X, 10.1109/TEPM.2009.2027893
-
L. Tan, J. Li, K. Wang, and S. Liu, IEEE Trans. Electron. Packag. Manuf. ITEPFL 1521-334X, 32, 233 (2009). 10.1109/TEPM.2009.2027893
-
(2009)
IEEE Trans. Electron. Packag. Manuf.
, vol.32
, pp. 233
-
-
Tan, L.1
Li, J.2
Wang, K.3
Liu, S.4
|