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Journal of Electroceramics

Volumn 23, Issue 2-4, 2009, Pages 406-409

Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices

(8) Lee, Sung Nam a Paek, H S a Son, J K a Kim, H a Kim, K K b Ha, K H b Nam, O H c Park, Y a

a Samsung Electro Mechanics (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

c Korea Polytechnic University (South Korea)

Author keywords

Degradation; GaN; LD; LED

Indexed keywords

ACTIVE REGIONS; ALINGAN; DEVICE OPERATIONS; DISLOCATION DENSITIES; DOPING PROCESS; GAN SUBSTRATE; GAN/SAPPHIRE; GRADUAL DEGRADATION; HIGH VOLTAGE; LASER DIODES; LIGHT EMITTING DEVICES; MG CONCENTRATIONS; MULTIPLE QUANTUM WELLS; MULTIQUANTUM WELLS; OPTICAL QUALITIES; P-TYPE; PHOTOLUMINESCENCE INTENSITIES; SECONDARY ION MASS SPECTROSCOPY; THREADING DISLOCATION;

DEGRADATION; DOPING (ADDITIVES); GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; QUANTUM WELL LASERS; SECONDARY ION MASS SPECTROMETRY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 73449092882 PISSN: 13853449 EISSN: 15738663 Source Type: Journal
DOI: 10.1007/s10832-008-9478-2 Document Type: Article

Times cited : (41)

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