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Applied Physics Letters

Volumn 95, Issue 1, 2009, Pages

High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures

(8) Lee, J W a Sone, C a Park, Y a Lee, S N b Ryou, J H c Dupuis, R D c Hong, C H d Kim, H d

a Samsung Electro Mechanics (South Korea)

b GEORGIA INSTITUTE OF TECHNOLOGY (United States)

c Korea Polytechnic University (South Korea)

d Chonbuk National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MASK; DISLOCATION DENSITIES; EMBEDDED STRUCTURES; EXTRACTION EFFICIENCIES; GAN TEMPLATE; GAN-BASED LIGHT-EMITTING DIODES; HEXAGONAL PYRAMIDS; HIGH EFFICIENCY; ORDER OF MAGNITUDE; OUTPUT POWER; PHOTOLUMINESCENCE INTENSITIES;

CURRENT DENSITY; EXTRACTION; FABRICATION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING GALLIUM;

LIGHT EMITTING DIODES;

EID: 67650474971 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3166868 Document Type: Article

Times cited : (34)

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