Selective wet etching of p-GaN for efficient GaN-based light-emitting diodes

IEEE Photonics Technology Letters

Volumn 18, Issue 14, 2006, Pages 1512-1514

  Na, Seok In ^a   Ha, Ga Young ^a   Han, Dae Seob ^a   Kim, Seok Soon ^a   Kim, Ja Yeon ^a   Lim, Jae Hong ^a   Kim, Dong Joon ^b   Min, Kyeong Ik ^b   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Electro Mechanics   (South Korea)

Author keywords

GaN; Leakage currents; Light emitting diodes (LEDs); Light output power; Selective wet etching

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; ETCHING; LEAKAGE CURRENTS; OPTICAL VARIABLES MEASUREMENT; PHOTONS; SEMICONDUCTING GALLIUM COMPOUNDS;

LIGHT-OUTPUT POWER; SELECTIVE WET ETCHING; SURFACE PASSIVATION;

LIGHT EMITTING DIODES;

EID: 33745596605     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.877562     Document Type: Article

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