Modeling of amorphous oxide semiconductor thin film transistors and subgap density of states

Digest of Technical Papers - SID International Symposium

Volumn 39, Issue 1, 2008, Pages 1277-1280

  Hsieh, Hsing Hung ^a,b   Kamiya, Toshio ^a   Nomura, Kenji ^a   Hosono, Hideo ^a   Wu, Chung Chih ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDE SEMICONDUCTORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS;

AMORPHOUS OXIDE SEMICONDUCTOR (AOS); DEVICE SIMULATIONS; GAP STATE; HIGH MOBILITY; IGZO TFTS; LOWER DENSITY; SUBGAP DENSITY OF STATE (DOS); SUBTHRESHOLD SWING;

AMORPHOUS SILICON;

EID: 54549096839     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.3069372     Document Type: Conference Paper

References (13)

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