Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFT's

IEEE Transactions on Electron Devices

Volumn 43, Issue 9, 1996, Pages 1433-1440

  Jacunski, Mark D ^a   Shur, Michael S ^a   Hack, Michael ^a  

^a UNIVERSITY OF VIRGINIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING SILICON COMPOUNDS;

FIELD EFFECT MOBILITY; GATE TO CHANNEL CAPACITANCE; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 0030241288     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.535329     Document Type: Article

References (21)

1. K. Lee M. Shur T. Fjeldly T. Ytterdal Semiconductor Device Modeling for VLSI. 211 217 1993 Prentice-Hall NJ, Englewood Cliffs
2. C. K. Park C. Y. Lee K. R. Lee B. J. Moon Y. Byun M. Shur A unified current-voltage model for long channel n-MOSFET's IEEE Trans. Electron Devices 38 399 1991 16 2451 69923
3. H. Slade M. Shur M. Hack Temperature and frequency dependent characteristics of amorphous silicon thin film transistors Proc. Material Res. Soc. Spring Meeting 1995
4. S. M. Sze Physics of Semiconductor Devices 2nd 386 1981 Wiley New York
5. N. Lifshitz S. Luryi Enhanced channel mobility in polysilicon thin film transistors IEEE Electron Device Lett. 15 274 1994 55 7327 296214
6. D. Straub E. Lueder T. Kallfass K. Schleupen An analytical model for polycrystalline thin film transistors Proc. Int. Display Res. Conf. 398 1994
7. M. Shur M. Hack Y. Byun Circuit model and parameter extraction for polysilicon thin film transistors Proc. 1993 Int. Semiconductor Dev. Res. Symp. 165 1993
8. J. Seto The electrical properties of polycrystalline silicon films J. Appl. Phys. 46 5247 1975
9. T. Katoh N. Hirashita Effects of trap state on field effect mobility of MOSFET's formed on large grain polysilicon films Jpn. J. Appl. Phys. 28 L2291 1989
10. SEMICAD Device, ver. 1.2 1994 Dawn Technologies, Inc. CA, Sunnyvale
11. M. Hack J. Shaw P. LeComber M. Williams Numerical simulations of amorphous and polycrystalline silicon thin film transistors Jpn. J. Appl. Phys. 29 L2360 1990
12. M. Clark Current status and future prospects of poly-Si devices IEE Proc. Circuits Dev. Syst. 141 3 1994 2190 6876 278064
13. C. Reita S. Fluxman Design and operation of poly-Si analogue circuits IEE Proc. Circuits Dev. Syst. 141 60 1994 2190 6876 278075
14. M. Cao T. Zhao K. Saraswat J. Plummer A simple EEPROM cell using twin polysilicon thin film transistors IEEE Electron Device Lett. 15 304 1994 55 7327 296224
15. SEMICAD Device User's Guide and Reference Manual. 302 1994 Dawn Technologies, Inc CA, Sunnyvale
16. H. Chern C. Lee T. Lei Correlation of polysilicon thin film transistor characteristics to defect states via thermal annealing IEEE Trans. Electron Devices 41 460 1994 16 6817 275239
17. T. Li P. Lin On the pseudo-subthreshold characteristics of polycrystalline silicon thin film transistors with large grain size IEEE Electron Device Lett. 14 240 1993 55 5621 215180
18. M. Shur M. Jacunski M. Hack Device and circuit models for amorphous silicon and polysilicon thin film transistors used in high definition display technology Proc. Int. Display Res. Conf. 45 1994
19. I. Wu A. Lewis T. Huang A. Chiang Effects of trap state density reduction by plasma hydrogenation in low-temperature polysilicon TFT IEEE Electron Device Lett. 10 123 1989 55 1376 31689
20. B. Faughnan Subthreshold model of a polycrystalline silicon thin film effect transistor Appl. Phys. Lett. 50 290 1987
21. S. Fluxman Design and performance of digital polysilicon thin film transistor circuits on glass IEE Proc. Circuits Dev. Syst. 141 56 1994 2190 6876 278074