SPICE models for amorphous silicon and polysilicon thin film transistors

Journal of the Electrochemical Society

Volumn 144, Issue 8, 1997, Pages 2833-2839

  Shur, Michael S ^a,c   Slade, Holly C ^a,b,c   Jacunski, Mark D ^b   Owusu, Albert A ^b   Ytterdal, Trond ^a,d  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b University of Virginia   (United States)

^c ELECTROCHEMICAL SOCIETY   (United States)

^d Nordic Semiconductor ASA   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; LEAKAGE CURRENTS; MATHEMATICAL MODELS;

POLYSILICON; SOFTWARE PACKAGE SPICE;

THIN FILM TRANSISTORS;

EID: 0031210179     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837903     Document Type: Article

References (32)

1. M. Hack, J. G. Shaw, P. G. LeComber, and M. Williams, Jpn. J. Appl. Phys., 29, L2360 (1990).
2. M. Jacunski, M. Shur, and M. Hack, IEEE Trans. Electron. Devices, ED-43, 1433 (1996).
3. M. D. Jacunski, Ph.D. Dissertation, University of Virginia, Charlottesville, VA (1996).
4. H. C. Slade, Ph.D. Dissertation, University of Virginia, Charlottesville, VA (1997).
5. H. Chern, C. Lee, and T. Lei, IEEE Trans. Electron. Devices, ED-41, 460 (1994).
6. J. Kanicki, F. R. Libsch, J. Griffith, and R. Polastre, J. Appl. Phys., 69, 2340 (1991).
7. M. D. Jacunski, M. S. Shur, A. Owusu, T. Ytterdal, and M. Hack, AMLCDs'95 Workshop Proceedings, p. 134 (1995).
8. J. Seto, J. Appl. Phys., 46, 5247 (1975).
9. A. A. Owusu, M. D. Jacunski, M. S. Shur, T. Ytterdal, and M. Hack, in Thin Film Transistor Technologies III, Y. Kuo, D. G. Ast, M. Hack, E. Leuder, and M. Matsumura, Editors, PV 96-23, p. 289, The Electrochemical Society Proceedings Series, Pennington, NJ (1996).
10. M. J. Powell, S. C. Deane, I. D. French, and J. R. Hughes, Philos. Mag. B, 63, 325 (1991).
11. A. Sanjoh, N. Ikeda, and K. Komaki, This Journal, 138, 1474 (1991).
12. M. S. Shur, M. D. Jacunski, H. C. Slade, and M. Hack, J. Soc. Info. Display, 3, 223 (1995).
13. M. D. Jacunski, M. S. Shur, T. Ytterdal, A. A. Owusu, and M. Hack, Mater. Res. Soc. Symp. Proc., 424, 213 (1996).
14. M. S. Shur, H. C. Slade, T. Ytterdal, L. Wang, Z. Xu, K. Aflatooni, Y. Byun, Y. Chen, M. Froggatt, A. Krishnan, P. Mei, H. Meiling, B.-H. Min, A. Nathan, S. Sherman, M. Stewart, and S. D. Theiss, ibid., 467, (1996).
15. I. Wu, A. Lewis, T. Huang, and A. Chiang, IEEE Electron. Device Lett., EDL-10, 123 (1989).
16. S. Bhattacharya, S. Banergee, and B. Nguyen, IEEE Trans. Electron. Device, ED-41, 221 (1994).
17. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., p. 446, Wiley-Interscience, New York (1981).
18. B. Iniguez, Private communication (1997).
19. A. A. Owusu, M.S. Thesis, University of Virginia, Charlottesvillee, VA (1996).
20. T. Globus, H. C. Slade, M. S. Shur, and M. Hack, Mater. Res. Soc. Symp. Proc., 336, 823 (1994).
21. H. C. Slade, M. S. Shur, and M. Hack, ibid., 377, 725 (1995).
22. J. Shaw and M. Hack, J. Appl. Phys., 55, 3831 (1984).
23. K. Lee, M. Shur, T. Fjeldly, and T. Ytterdal, Semiconductor Device Modeling for VLSI, pp. 506-507, Prentice Hall, Englewood Cliffs, NJ (1993).
24. H. C. Slade, M. S. Shur, S. C. Deane, and M. Hack, in Amorphous Silicon Technology, Vol. 420, p. 257, Materials Research Society Proceedings, MRS, Pittsburgh, PA (1996).
25. To be published.
26. H. C. Slade, M. S. Shur, S. C. Deane, and M. Hack, Appl. Phys. Lett., 69, 2560 (1996).
27. D. Greve and V. Hay, J. Appl. Phys., 61, 1176 (1987).
28. M. Quinn, P. Migliorato, and C. Reita, IEEE Proc. Circuits Devices Syst., CDS-141, 45 (1994).
29. BSIM3v3 Manual, pp. 5-3, University of California (1995).
30. J. Meyer, RCA Rev., 32, 42 (1971).
31. K. Lee, M. Shur, T. Fjeldly, and T. Ytterdal, Semiconductor Device Modeling for VLSI, pp. 211-219, Prentice Hall, Englewood Cliffs, NJ (1993).
32. H. C. Slade, M. S. Shur, and T. Ytterdal, Mater. Res. Soc. Symp. Proc., 467 (1997).