Catalyst-free GaN nanowire growth and optoelectronic characterization

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7768, Issue , 2010, Pages

  Bertness, Kris A ^a   Sanford, Norman A ^a   Schlager, John B ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

GaN nanowires; Growth mechanism; Molecular beam epitaxy; Photoluminescence

Indexed keywords

CATALYST-FREE; CRYSTALLINE DEFECTS; DEFECT-FREE; ELECTRICAL DATA; ELECTRICAL PROPERTY; EPITAXIALLY GROWN; GAN FILM; GAN NANOWIRES; GROWTH MECHANISMS; INTERNAL QUANTUM EFFICIENCY; LENGTH AND POSITION; NUCLEATION PROCESS; OPTICAL LUMINESCENCE; OPTOELECTRONIC CHARACTERIZATION; PATTERNED SUBSTRATES; PHOTOLUMINESCENCE LIFETIME; SELECTIVE EPITAXY; STICKING COEFFICIENTS; STRAIN-RELIEVING; SURFACE ENERGIES;

CARRIER MOBILITY; CATALYSTS; DEFECTS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSTRUCTURED MATERIALS; NANOWIRES; PHOTOLUMINESCENCE; SURFACE CHEMISTRY;

ELECTRIC WIRE;

EID: 77958093267     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.859950     Document Type: Conference Paper

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