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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 10, 2010, Pages 2772-2776

Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxy

(7) Umeno, K a Furukawa, Y a Urakami, N a Noma, R a Mitsuyoshi, S a Wakahara, A a Yonezu, H a

a TOYOHASHI UNIVERSITY OF TECHNOLOGY (Japan)

Author keywords

As P exchange reaction; Dilute nitride; GaInNAs; Molecular beam epitaxy; Quantum dots

Indexed keywords

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEPOSITION SEQUENCES; DILUTE NITRIDES; EXCHANGE REACTION; GAINNAS; HETERO INTERFACES; HIGH-DENSITY; INGAASN; ISLAND DENSITY; QUANTUM DOT; QUANTUM DOTS; QUANTUM WELL; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SELF-ASSEMBLED; STRANSKI-KRASTANOV GROWTH MODE;

CHEMICAL REACTIONS; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAMS; MONOLAYERS; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77957997255 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2009.11.014 Document Type: Conference Paper

Times cited : (13)

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