Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

Applied Physics Letters

Volumn 93, Issue 10, 2008, Pages

  Chamings, J ^a   Adams, A R ^a   Sweeney, S J ^a   Kunert, B ^b,c   Volz, K ^b   Stolz, W ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

^c NAsP III/V GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LASERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THRESHOLD CURRENT DENSITY;

PHYSICAL PROPERTIES; TEMPERATURE DEPENDENCES; WIDE TEMPERATURE RANGE;

SEMICONDUCTOR LASERS;

EID: 51749107221     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2975845     Document Type: Article

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