Growth mode transition of InGaAs in OMVPE growth on GaP (001)

Microelectronic Engineering

Volumn 51, Issue , 2000, Pages 35-42

  Moriya, H ^a   Nonogaki, Y ^a   Fuchi, S ^a   Koizumi, A ^a   Fujiwara, Y ^a   Takeda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRUCTURE (COMPOSITION); SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM PHOSPHIDE; GROWTH MODE; LOW PRESSURE ORGANOMETALLIC VAPOR PHASE EPITAXY;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0033691082     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00458-X     Document Type: Article

References (8)

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