III-V epitaxy on Si for photonics applications

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4757-4762

  Yonezu, Hiroo ^a   Furukawa, Yuzo ^a   Wakahara, Akihiro ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B2. Semiconducting silicon; B3. Field effect transistors; B3. Light emitting diodes

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); CRYSTAL GROWTH; DEFECTS; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; LIGHT EMISSION; LIGHT EMITTING DIODES; LUMINESCENCE; METALLIC COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MONOLITHIC INTEGRATED CIRCUITS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; POINT DEFECTS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SILICON; SILICON ALLOYS; VANADIUM COMPOUNDS;

A3. METALORGANIC VAPOR PHASE EPITAXY; A3. MOLECULAR BEAM EPITAXY; B2. SEMICONDUCTING III-V MATERIALS; B2. SEMICONDUCTING SILICON; B3. FIELD EFFECT TRANSISTORS; B3. LIGHT EMITTING DIODES;

VANADIUM ALLOYS;

EID: 56249119153     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.073     Document Type: Article

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