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Solid State Communications

Volumn 117, Issue 8, 2001, Pages 465-469

Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice

(3) Zhuang, Q D a Yoon, S F a Zheng, H Q a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

B. Epitaxy; D. Optical properties; E. Luminescence

Indexed keywords

ANNEALING; ARSENIC; COMPOSITION EFFECTS; COMPUTER SIMULATION; MOLECULAR BEAM EPITAXY; PHOSPHORUS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; X RAY DIFFRACTION ANALYSIS;

DOUBLE-CRYSTAL X RAY DIFFRACTION (DCXRD) SPECTRA; SOLID-SOURCE MOLECULAR BEAM EPITAXY (SSMBE);

SEMICONDUCTOR SUPERLATTICES;

EID: 0035254063 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/s0038-1098(00)00506-8 Document Type: Article

Times cited : (2)

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