Band alignments of InGaPN/GaPN quantum well structures on GaP and Si

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 539-544

  Umeno, Kazuyuki ^a   Kim, Sung Man ^a   Furukawa, Yuzo ^a   Yonezu, Hiroo ^a   Wakahara, Akihiro ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting indium gallium phosphide; B2. Semiconducting silicon; B3; Light emitting diodes

Indexed keywords

LIGHT EMITTING DIODES; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

BAND ANTICROSSING (BAC); MODEL SOLID THEORY (MST); RADIOFREQUENCY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY (RF-MBE); SINGLE QUANTUM WELL (SQW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 33947326252     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.071     Document Type: Article

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