MBE growth of GaAsN/GaP(N) quantum wells with abrupt heterointerfaces for photonics applications on Si substrates

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1748-1753

  Umeno, K ^a   Furukawa, Y ^a   Wakahara, A ^a   Noma, R ^a   Okada, H ^a   Yonezu, H ^a   Takagi, Y ^b   Kan, H ^b  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b HAMAMATSU PHOTONICS K K   (Japan)

Author keywords

A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

CHEMICAL REACTIONS; CRYSTAL GROWTH; CURRENT DENSITY; DIODES; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; HETEROJUNCTIONS; INTEGRATED CIRCUITS; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SILICON; SUBSTRATES; WELLS;

A3. MOLECULAR BEAM EPITAXY; A3. QUANTUM WELLS; ACTIVE LAYERS; B2. SEMICONDUCTING III-V MATERIALS; B3. LIGHT-EMITTING DIODES; BAND ALIGNMENTS; CAPPING LAYERS; CONDUCTION BAND OFFSETS; EXCHANGE REACTIONS; GAAS; GETTERING; HETERO-INTERFACES; INFRARED REGIONS; INTERMIXING LAYERS; LIGHT-EMITTING DEVICES; MBE GROWTHS; MONOLITHIC OPTOELECTRONIC INTEGRATED CIRCUITS; PHOTONICS APPLICATIONS; SI SUBSTRATES; SINGLE QUANTUM WELLS; SOLID-SOURCE MOLECULAR BEAM EPITAXIES; WAVELENGTH RANGES;

GALLIUM ALLOYS;

EID: 63349089351     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.075     Document Type: Article

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