Self-assembled InGaAs dots grown on GaP (0 0 1) substrate by low-pressure organometallic vapor phase epitaxy

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 3, 2000, Pages 855-859

  Fuchi, S ^a   Nonogaki, Y ^a   Moriya, H ^a   Koizumi, A ^a   Fujiwara, Y ^a   Takeda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM PHOSPHIDE; LOW-PRESSURE ORGANOMETALLIC VAPOR PHASE EPITAXY; STRANSKI-KRASTANOW GROWTH MODE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033718873     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(00)00076-X     Document Type: Article

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