Monolithic implementation of elemental devices for optoelectronic integrated circuit in lattice-matched Si/III-V-N alloy layers

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 33-36, 2006, Pages

  Furukawa, Yuzo ^a   Yonezu, Hiroo ^a   Morisaki, Yuji ^a   Moon, Soo Young ^a   Ishiji, Seigi ^a   Wakahara, Akihiro ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Device process; Lattice matching; Light emitting diode; MOSFET; Optoelectronic integrated circuit; Si, III V N alloy

Indexed keywords

HETEROJUNCTIONS; INTEGRATED CIRCUITS; LIGHT EMISSION; LIGHT EMITTING DIODES; MICROPROCESSOR CHIPS; MOSFET DEVICES; OPTICAL INTERCONNECTS; SEMICONDUCTING INDIUM COMPOUNDS;

DEVICE PROCESS; LATTICE-MATCHING; OPTOELECTRONIC INTEGRATED CIRCUIT; SI, III-V-N ALLOY;

OPTOELECTRONIC DEVICES;

EID: 33748761694     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L920     Document Type: Article

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