Using As/P exchange processes to modify InAs/InP quantum dots

Journal of Crystal Growth

Volumn 257, Issue 1-2, 2003, Pages 89-96

  Poole, P J ^a   Williams, R L ^a   Lefebvre, J ^a   Moisa, S ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

A1. Nanostructures; A3. Chemical beam epitaxy; B2. Semiconducting III V Materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOSPHORUS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM PHOSPHIDE;

EMISSION ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0042009762     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01421-0     Document Type: Article

References (33)

1. Stranski I.N., Krastanow L. Sitzungsber. Akad. Wiss. Math. -Naturwiss. K1. Abt. IIb. 146:1938;797.
2. Arakawa Y., Sakaki H. Appl. Phys. Lett. 40:1982;939.
3. Alferov Z. IEEE J. Sel. Top. Quantum Electron. 6:2000;832-840.
4. Park G., Shchekin O.B., Huffaker D.L., Deppe D.G. IEEE Photonics Technol. Lett. 12:2000;230.
5. Huang X., Stintz A., Hains C.P., Liu G.T., Cheng J., Malloy K.J. Electron. Lett. 36:2000;41.
6. Saito H., Nishi K., Kamei A., Sugou S. IEEE Photonics Technol. Lett. 12:2000;1298.
7. Poole P.J., McCaffrey J., Williams R.L., Lefebvre J., Chithrani D. J. Vac. Sci. Technol. B. 19:2001;1467.
8. Ustinov V.M., Zhukov A.E., Tsatsul'nikov A.F., Egorov A., Kovsh A.R., Maksimov M.V., Suvorova A.A., Bert N.A., Kop'ev P.S. Semiconductors. 31:1997;1080.
9. Frechengues S., Bertru N., Drouot V., Lambert B., Robinet S., Loualiche S., Lacombe D., Ponchet A. Appl. Phys. Lett. 74:1999;3356.
10. Yoon S., Moon Y., Lee T.W., Yoon E., Kim Y.D. Appl. Phys. Lett. 74:1999;2029.
11. Rongen R.T.H., van Rijswijk A.J.C., Leys M.R., van Es C.M., Vonk H., Wolter J.H. Semicond. Sci. Technol. 12:1997;974.
12. Suh K.Y., Lee H.H., Yoon E. J. Appl. Phys. 85:1999;233.
13. Ozasa K., Aoyagi Y., Young Ju P., Samuelson L. Appl. Phys. Lett. 71:1997;797.
14. Gonzalez L., Garcia J.M., Garcia R., Briones F., Martinez Pastor J., Ballesteros C. Appl. Phys. Lett. 76:2000;1104.
15. Brault J., Gendry M., Grenet G., Hollinger G., Desieres Y., Benyattou T. Appl. Phys. Lett. 73:1998;2932.
16. Ustinov V.M., Weber E.R., Ruvimov S., Liliental Weber Z., Zhukov A.E., Egorov A.Y., Kovsh A.R., Tsatsul'nikov A.F., Kop'ev P.S. Appl. Phys. Lett. 72:1998;362.
17. Li H., Daniels Race T., Wang Z. J. Crystal Growth. 200:1999;321.
18. Wang B., Chua S.J., Wang Z., Liu S. Physica E. 8:2000;290.
19. Roth J.A., Chow D.H., Olson G.L., Brewer P.D., Williamson W.S., Johs B. J. Crystal Growth. 201:1999;31.
20. Raymond S., Studenikin S., Cheng S.-J., Pioro-Ladriere M., Ciorga M., Poole P.J., Robertson M.D. Semicond. Sci. Technol. 18:2003;385.
21. Bitz A., Jordan C., Di Ventra M., Mader K.A., Andreani L.C., Carlin J.F., Rudra A., Staehli J.L. Nuovo Cimento D 17D ser. 1:1995;1367.
22. Folliot H., Loualiche S., Lambert B., Drouot V., LeCorre A. Phys. Rev. B. 58:1998;10700.
23. Lian G.D., Yuan J., Brown L.M., Kim G.H., Ritchie D.A. Appl. Phys. Lett. 73:1998;49.
24. Paranthoen C., Bertru N., Dehaese O., Le Corre A., Loualiche S., Lambert B., Patriarche G. Appl. Phys. Lett. 78:2001;1751.
25. P.J. Poole, R.L. Williams, J. Lefebvre, J.P. McCaffrey, N. Rowell, in: Trimming the size of InAs/InP quantum dots grown by CBE, Williamsburg, VA, USA, IEEE, Piscataway, NJ, USA, 2000, pp. 396-399.
26. Marchand H., Desjardins P., Guillon S., Paultre J.E., Bougrioua Z., Yip R.F., Masut R.A. Appl. Phys. Lett. 71:1997;527.
27. Garcia J.M., Medeiros Ribeiro G., Schmidt K., Ngo T., Feng J.L., Lorke A., Kotthaus J., Petroff P.M. Appl. Phys. Lett. 71:1997;2014.
28. Lorke A., Luyken R.J., Govorov A.O., Kotthaus J.P., Garcia J.M., Petroff P.M. Phys. Rev. Lett. 84:2000;2223.
29. Xie Q., Chen P., Madhukar A. Appl. Phys. Lett. 65:1994;2051.
30. Ledentsov N.N., Shchukin V.A., Grundmann M., Kirstaedter N., Bohrer J., Schmidt O., Bimberg D., Ustinov V.M., Egorov A., Zhukov A.E., Kop'ev P.S., Zaitsev S.V., Gordeev N., Alferov Z.I., Borovkov A., Kosogov A.O., Ruvimov S.S., Werner P., Gosele U., Heydenreich J. Phys. Rev. B. 54:1996;8743.
31. Gutierrez H.R., Cotta M.A., Bortoleto J.R.R., de-Carvalho M.M.G. J. Appl. Phys. 92:2002;7523.
32. Songmuang R., Kiravittaya S., Schmidt O.G. J. Crystal Growth. 249:2003;416.
33. Sallese J.M., Carlin J.F., Gailhanou M., Ilegems M. Appl. Phys. Lett. 71:1997;2331.