Shape of self-assembled InAs islands grown by molecular beam epitaxy

Journal of Electronic Materials

Volumn 28, Issue 5, 1999, Pages 481-485

  Lee, Hao ^a   Yang, Weidong ^a   Sercel, Peter C ^a   Norman, A G ^b  

^a UNIVERSITY OF OREGON   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

POLARIZATION RESOLVED PHOTOLUMINESCENCE; SELF ASSEMBLED STRUCTURE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032649505     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0098-7     Document Type: Article

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